ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,190, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"MIM memory cell with backside interconnect structures" was invented by Meng-Sheng Chang (Chu-bei City, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Yih Wang (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed. The memory device includes a plurality of one-time programmable (OTP) memory cells. Each OTP memory cell includes a transistor disposed on a first side of a substrate, and a capacitor disposed on a second side of the substrate opposite to the first side and electrically connected to the ...