US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Method of forming source/drain regions with quadrilateral layers" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,945, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming source/drain regions with quadrilateral layers" was invented by Tsz-Mei Kwok (Hsinchu, Taiwan), Yung-Chun Yang (New Taipei, Taiwan), Cheng-Yen Wen (Taichung, Taiwan), Li-Li Su (Chubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a protruding semiconductor stack including a plurality of sacrificial layers and a plurality of nanostructures, with the plurality of sacrificial layers and the plurality of nanostructures being laid out alternatingly. The method furth...