US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Comb electrode release process for MEMS structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,358,785, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Comb electrode release process for MEMS structure" was invented by Ting-Jung Chen (Kaohsiung, Taiwan) and Lee-Chuan Tseng (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes: a first substrate; a dielectric layer disposed over the first substrate; and a second substrate disposed over the dielectric layer. The second substrate includes anchor regions comprising silicon extending upwards from the dielectric layer, and a series of interdigitated fingers extend from inner sidewalls of the ancho...