US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Semiconductor structure having dielectric structure extending into second cavity of semiconductor fin" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,798, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having dielectric structure extending into second cavity of semiconductor fin" was invented by Ryan Chia-Jen Chen (Hsinchu, Taiwan), Li-Wei Yin (Hsinchu, Taiwan), Tzu-Wen Pan (Hsinchu, Taiwan), Cheng-Chung Chang (Kaohsiung City, Taiwan), Shao-Hua Hsu (Taitung City, Taiwan), Yi-Chun Chen (Hsinchu, Taiwan), Yu-Hsien Lin (Kaohsiung City, Taiwan) and Ming-Ching Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structur...