US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "RFSOI semiconductor structures including an electromagnetic shield layer and methods of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,174, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RFSOI semiconductor structures including an electromagnetic shield layer and methods of manufacturing the same" was invented by Fu-Hai Li (Tainan City, Taiwan), Chien Hung Liu (Hsinchu, Taiwan), Hsien Jung Chen (Hsinchu, Taiwan), Kuo-Ching Huang (Hsinchu City, Taiwan) and Harry-Hak-Lay Chuang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor struc...