US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Phase-change random access memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,038, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Phase-change random access memory device and method of forming the same" was invented by Chin I Wang (Tainan, Taiwan), Huan-Chieh Chen (Taichung, Taiwan), Chia-Wen Zhong (Taichung, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom...