US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Multi-gate device fabrication and structures thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,799, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate device fabrication and structures thereof" was invented by Chien-Chih Lin (Taichung City, Taiwan), An Chyi Wei (Hsin-Chu City, Taiwan), Hsiu-Hao Tsao (Taichung, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Szu-Chi Yang (Hsinchu City, Taiwan), Chang-Jhih Syu (Hsinchu, Taiwan) and Yu-Jiun Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In ...