US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,098, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices" was invented by Miao-Syuan Fan (Hsinchu, Taiwan), Yen Chuang (Taipei, Taiwan), Yuan-Lin Lin (Hsinchu, Taiwan) and Ta-Hsiang Kung (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes: forming mutually parallel three-dimensional (3D) conductive channels coated with a conformal sacrificial layer, the 3D conductive channels coated with the conformal sacrificial layer bei...