US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Memory device structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,760, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device structure and method" was invented by Shih-Yu Liao (Hsinchu City, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory cells, semiconductor devices, semiconductor stacked structures, and fabrication methods are provided. An example memory cell includes a capacitor and a transistor stacked over the capacitor in a compact configuration. The capacitor includes a floating gate, a high-k dielectric layer, and a metal gate. The metal gate extends horizontally from a first sidewall to ...