US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Low pressure plasma etch process for preferential generation of oxide residue and applications for the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,052, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low pressure plasma etch process for preferential generation of oxide residue and applications for the same" was invented by Tzu-Ging Lin (Kaohsiung City, Taiwan) and Jih-Jse Lin (Sijhih City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure may be provided by: forming semiconductor fins over a semiconductor substrate; forming a gate dielectric layer and gate electrodes; forming a silicon layer over the gate electrodes; forming a dielectric mask layer including openings over the silicon layer; etching portions of the...