US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Flash memory with improved gate structure and a method of creating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,768, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Flash memory with improved gate structure and a method of creating the same" was invented by Sheng-Chieh Chen (Hsinchu, Taiwan), Ming Chyi Liu (Hsinchu, Taiwan) and Shih-Chang Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments provide a flash memory with an improved gate structure and a method of creating the same. The flash memory includes a plurality of memory cells that include a memory gate, a selection gate, a gate dielectric layer, and a protective cap formed on an upper surface of the gate dielectric lay...