US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Device having extended source/drain contact and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,815, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Device having extended source/drain contact and method" was invented by Chih-Hao Chang (Hsinchu, Taiwan), Wei-Yang Lee (Hsinchu, Taiwan), Kuan-Hao Cheng (Hsinchu, Taiwan) and Cheng-Yi Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a stack of semiconductor nanostructures on a semiconductor fin; forming a source/drain opening adjacent the stack; forming a bottom dielectric layer on the semiconductor fin; forming a source/drain region in the source/drain opening, a void being present between the source...