ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,203, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Bump integration with redistribution layer" was invented by Ting-Li Yang (Tainan City, Taiwan), Po-Hao Tsai (Zhongli City, Taiwan), Ching-Wen Hsiao (Hsinchu, Taiwan), Hong-Seng Shue (Zhubei City, Taiwan) and Ming-Da Cheng (Taoyuan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming an interconnect structure over a substrate; forming a first passivation layer over the interconnect structure; forming a first conductive feature over the first passivation layer and electrically coupl...