US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Tuning tensile strain on FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,569, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. (Hsin-Chu, Taiwan).

"Tuning tensile strain on FinFET" was invented by Kuo-Cheng Chiang (Zhubei, Taiwan), Zhi-Chang Lin (Zhubei, Taiwan), Guan-Lin Chen (Baoshan Township, Taiwan), Ting-Hung Hsu (MiaoLi, Taiwan) and Jiun-Jia Huang (Beigang Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin field effect transistor (FinFET) having a tunable tensile strain and an embodiment method of tuning tensile strain in an integrated circuit are provided. The method includes forming a source/drain region on opposing sides of a gate region in a fin, forming spacers over ...