US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,533, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Ming-Heng Tsai (Taipei, Taiwan), Chun-Sheng Liang (Changhua County, Taiwan) and Ta-Chun Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes first nanostructures formed over a substrate. The structure also includes second nanostructures formed over the substrate. The structure also includes a wall structure formed between the first nanostructures and the second nanostructures. The structure also includes a ga...