US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "Reduction of gate-drain capacitance" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,570, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Reduction of gate-drain capacitance" was invented by Jung-Hung Chang (Changhua County, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Shih-Cheng Chen (Taipei, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping aroun...