US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Methods of manufacture of semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,543, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of manufacture of semiconductor devices" was invented by Chun-Hsien Huang (Hsinchu, Taiwan), Chang-Ting Chung (Hsinchu, Taiwan), Wei-Cheng Lin (Tainan, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan) and Chih-Wei Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silico...