ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,548, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Kuo-Cheng Chiang (Zhubei, Taiwan), Chen-Feng Hsu (Hsinchu, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan), Tung Ying Lee (Hsinchu, Taiwan), Wei-Sheng Yun (Taipei, Taiwan) and Yu-Lin Yang (Baoshan Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is ...