US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 27 for "Metal insulator metal capacitor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,793, issued on Jan. 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal insulator metal capacitor structure and method of manufacturing the same" was invented by Ching-Jing Wu (Zaoqiao Township, Taiwan), Yun-Chin Tsou (Hsinchu, Taiwan), An Shun Teng (Hsinchu, Taiwan) and Mingni Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a manufacturing method, and more particularly to a 3D metal insulator metal (MIM) capacitor structure. The MIM capacitor structure includes a first capacitor electrode formed on a top surface of a substrate...