US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "FinFET structure with fin top hard mask and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,518, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FinFET structure with fin top hard mask and method of forming the same" was invented by Che-Yu Yang (Hsinchu, Taiwan), Kai-Chieh Yang (Kaohsiung, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed o...