US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 27 for "EUV lithography mask with a porous reflective multilayer structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,535,727, issued on Jan. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"EUV lithography mask with a porous reflective multilayer structure" was invented by Chih-Tsung Shih (Hsinchu, Taiwan), Shih-Chang Shih (Hsinchu, Taiwan), Li-Jui Chen (Hsinchu, Taiwan) and Po-Chung Cheng (Chiayi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. ...