US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Transistor source/drain regions and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,518, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor source/drain regions and methods of forming the same" was invented by Wei-Min Liu (Hsinchu, Taiwan), Tsz-Mei Kwok (Hsinchu, Taiwan), Hui-Lin Huang (Hsinchu, Taiwan), Cheng-Yen Wen (Taichung, Taiwan), Li-Li Su (Chubei, Taiwan), Chii-Horng Li (Zhubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a semiconductor fin extending from a semiconductor substrate; a nanostructure above the semiconductor fin; a source/drain region adjacent a channel region of the nano...