ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,492, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Structure and formation method of semiconductor device with epitaxial structures" was invented by Jung-Hung Chang (Yuanlin, Taiwan), Shih-Cheng Chen (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan), Chia-Cheng Tsai (Hsinchu, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Zhi-Chang Lin (Zhubei, Taiwan), Chien-Ning Yao (Hsinchu, Taiwan) and Tsung-Han Chuang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming a fin structure, and the fin s...