US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Source/drain EPI structure for device boost" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,520, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Source/drain EPI structure for device boost" was invented by Shahaji B. More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin; etching the semiconductor fin to form a trench; and epitaxially growing a semiconductor structure in the trench, which includes epitaxially growing a first semiconductor layer having silicon germanium (SiGe); epitaxially growing a second semicon...