US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Semiconductor devices with modulated gate structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,523, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with modulated gate structures" was invented by Hsiao-Chun Chang (Hsinchu, Taiwan) and Guan-Jie Shen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device with modulated gate structures and a method for forming the same. The method includes forming a fin structure, depositing a polysilicon layer over the fin structure, and forming a photoresist mask layer on the polysilicon layer. The method further includes etching, with a first etching condition, the polysili...