US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Profile control of isolation structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,510, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Profile control of isolation structures in semiconductor devices" was invented by Wei-Jin Li (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with doped shallow trench isolation (STI) structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure with first and second nanostructured layers arranged in an alternating conf...