US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Methods of forming source/drain contacts in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,522, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Methods of forming source/drain contacts in field-effect transistors" was invented by Sheng-Tsung Wang (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first epitaxial source/drain (S/D) feature disposed over a first semiconductor fin, a second epitaxial S/D feature disposed over a second semiconductor fin and adjacent to the first epitaxial S/D feature, an interlayer dielectric (ILD) layer...