US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Methods for reduction of photoresist defect" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,546, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for reduction of photoresist defect" was invented by Chun-Wei Liao (Taoyuan, Taiwan) and Hui-Chun Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure in various embodiments provides a hardened resist layer that can reduce resist scum defects in a resist layer. In one embodiment, a lithography method is provided. The method includes forming a resist layer over a substrate, performing an exposure process on the resist layer, performing a developing process on the resist layer to form a patterned res...