US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Jan. 20 for "Method for manufacturing a memory device using multiple etching processes" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,666, issued on Jan. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing a memory device using multiple etching processes" was invented by Chang-Lin Yang (Taoyuan, Taiwan), Sheng-Yuan Chang (Hsinchu, Taiwan), Chung-Te Lin (Tainan, Taiwan), Han-Ting Lin (Hsinchu, Taiwan) and Chien-Hua Huang (Toufen Township, Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a memory device includes forming a first metal layer over a substrate, forming a magnetic tunnel junction (MTJ) layer stack over the first metal layer, forming a second metal layer over the MT...