ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,716, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Low thermal budget dielectric for semiconductor devices" was invented by Mrunal Abhijith Khaderbad (Hsinch, Taiwan), Ko-Feng Chen (Hsinchu, Taiwan), Zheng-Yong Liang (Hsinchu, Taiwan), Chen-Han Wang (Zhubei, Taiwan), De-Yang Chiou (Hsinchu, Taiwan), Yu-Yun Peng (Hsinchu, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures wit...