US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Integrated circuit with backside trench for nanosheet removal" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,509, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with backside trench for nanosheet removal" was invented by Chun-Yuan Chen (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The integrated circuit includes a backside trench through the substrate that removes a lowest semiconductor nanosheet of the first nanosheet transisto...