US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "High voltage semiconductor devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,502, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High voltage semiconductor devices and methods of manufacturing thereof" was invented by Hong-Shyang Wu (Taipei, Taiwan) and Kuo-Ming Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first well of a first conductivity type near a surface of a semiconductor substrate, and a second well of a second conductivity type near the surface of the semiconductor substrate. The semiconductor device includes a transistor comprising: (i) a first source/drain region formed in the first well; (ii) a second sourc...