US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 20 for "Device structure with reduced leakage current" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,504, issued on Jan. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Device structure with reduced leakage current" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin on a substrate extending along a fin direction, a first and a second source/drain features on the fin. The semiconductor device also includes a stack of semiconductor layers over a first portion of the fin and between the first source/drain feature and the second source/drain feature. The semiconductor device further includes a gate structure over the stack of sem...