US Patent Issued to Taiwan Semiconductor Manufacturing on Jan. 13 for "Vertical 1T1R structure for embedded memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,006, issued on Jan. 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical 1T1R structure for embedded memory" was invented by Kuo-Pin Chang (Zhubei, Taiwan), Yu-Wei Ting (Taipei, Taiwan) and Kuo-Ching Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an embedded memory device with vertically stacked source, drain and gate connections. The semiconductor memory device includes a substrate and a pillar of channel material extending in a first direction. A bit line is disposed over the pillar of channel material and is coupled to the pillar of channel material, and ext...