ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,343, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure and method for forming the same" was invented by Wei-Jin Li (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan) and Wen-Kai Lin (Yilan County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming is provided. The semiconductor structure includes nanostructures separated from one another and stacked over a substrate, a gate stack wrapping around the nanostructures, and a dielectric fin structure laterally spaced ap...