US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "High-frequency, low-voltage switch devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,513, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High-frequency, low-voltage switch devices and methods of manufacturing thereof" was invented by Kuo-Pin Chang (Hsinchu, Taiwan), Hung-Ju Li (Hsinchu, Taiwan), Yu-Wei Ting (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first film, a second film, and a third film that each include a phase change material (PCM) and are arranged with respect to one another along a first lateral direction. The semiconductor device includes a first metal pad, a second metal pad, a th...