US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Fin isolation structure for FinFET and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,365, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Fin isolation structure for FinFET and method of forming the same" was invented by Chu-An Lee (Hsinchu, Taiwan), Chen-Hao Wu (Hsinchu, Taiwan), Peng-Chung Jangjian (Hsinchu, Taiwan), Chun-Wen Hsiao (Hsinchu, Taiwan), Teng-Chun Tsai (Hsinchu, Taiwan) and Huang-Lin Chao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes an isolation feature formed over a substrate that includes a first fin and a second fin separated from each other by the isolati...