US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Deep trench capacitor and methods of forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,326, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Deep trench capacitor and methods of forming the same" was invented by Shu-Hui Su (Taipei, Taiwan), Hsin-Li Cheng (Hsinchu, Taiwan), Felix YingKit Tsui (Cupertino, Calif.) and Yu-Chi Chang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure provide a semiconductor device structure. The semiconductor device structure comprises a substrate comprising a first trench, wherein the first trench extends into a front side surface of the substrate, a first trench capacitor comprising a plurality...