US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Warm wafer after ion cryo-implantation" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,997, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Warm wafer after ion cryo-implantation" was invented by Yu-Chang Lin (Hsinchu, Taiwan), Tien-Shun Chang (New Taipei, Taiwan), Chun-Feng Nieh (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy...