US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Vertical field effect transistors and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,739, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical field effect transistors and methods for forming the same" was invented by Gao-Ming Wu (Taipei County, Taiwan), Li-Shyue Lai (Jhube, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Chung-Te Lin (Taiwan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plurality of vertical stacks may be formed over a substrate. Each of the vertical stacks includes, from bottom to top, a bottom electrode, a dielectric pillar, and a top electrode. A continuous active layer and a gate dielectric layer may be formed over the plurality of vertical...