US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Silicon fragment defect reduction in grinding process" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,091, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Silicon fragment defect reduction in grinding process" was invented by Chia-Cheng Tsai (Hsinchu, Taiwan), Kuo-Hsin Ku (Taipei, Taiwan), Chien-Wei Chang (Taoyuan, Taiwan), Chun Yan Chen (Zhubei, Taiwan) and Chia-Chi Chung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for fabricating a semiconductor wafer having a device side, a back side opposite the device side and an outer periphery edge. Suitably, the method includes: forming a top conducting layer on the device side of the semiconductor wafer; forming ...