US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Sidewall spacer structure to increase switching performance of ferroelectric memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,790, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Sidewall spacer structure to increase switching performance of ferroelectric memory device" was invented by Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a switching layer over a semiconductor substrate. The switching layer comprises a first metal oxide. An upper conductive structure overlies the switching layer. The switching layer is spaced between opposing sidewalls of the upper conductive structure. A first dielectric...