US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor structure having first silicide features and second silicide features and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,815, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having first silicide features and second silicide features and method for manufacturing the same" was invented by Chun-Yuan Chen (HsinChu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Szu-Chien Wu (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes forming first and second fins over a substrate. The fin includes first and second semiconductor...