US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor device with source/drain via" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,037, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with source/drain via" was invented by Jhon-Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes semiconductor channel region, source/drain regions, a source/drain contact, a first dielectric layer, a second dielectric layer, and a tungsten via. The source/drain regions are at opposite sides of the semiconductor channel region. The source/drain contact is over one of the source/drain regions. The first dielectric layer is over the source/drain contact. The second dielectric layer is...