US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Semiconductor device structure with interconnect structure having air gap" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,045, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with interconnect structure having air gap" was invented by Hsin-Yen Huang (New Taipei, Taiwan), Ting-Ya Lo (Hsinchu, Taiwan), Shao-Kuan Lee (Kaohsiung, Taiwan), Chi-Lin Teng (Taichung, Taiwan), Shau-Lin Shue (Hsinchu, Taiwan) and Hsiao-Kang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first conductive layer formed over a substrate, and an air gap structure adjacent to ...