US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,780, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Shih-Hao Lin (Hsinchu, Taiwan) and Chih-Chuan Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes nanostructures disposed over a substrate. The structure also includes a gate structure surrounding the nanostructures. The structure also includes inner spacers disposed over opposite sides of the gate structure. The structure also includes source/drain epitaxial structure disposed over opposite sides of the na...