US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,797, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Yu-Ru Lin (Hsinchu, Taiwan), Shu-Han Chen (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming alternating first semiconductor layers and second semiconductor layers stacked over a substrate. The method also includes etching the first semiconductor layers and the second semiconductor layers to form a fin structure. The me...