US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Semiconductor device having mixed CMOS architecture and method of manufacturing same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,831, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having mixed CMOS architecture and method of manufacturing same" was invented by Shih-Wei Peng (Hsinchu, Taiwan), Chun-Yen Lin (Hsinchu, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device (having a CMOS architecture) includes first to fourth cell regions Each of the first and second cell regions includes a pair of first and second stacks of nanosheets relative to, e.g., the Z-axis. The nanosheets of the first stack have a first dopant-type, e.g., N-type. The ...