ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,989, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device and method for forming the same" was invented by Georgios Vellianitis (Heverlee, Belgium), Oreste Madia (Brussels), Gerben Doornbos (Kessel-Lo, Belgium) and Marcus Johannes Henricus Van Dal (Linden, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first sacrificial layers and first channel layers alternately stacked over a substrate; forming second channel layers and second sacrificial layers alternately stacked over the first sacrificial layers and the first channel layers, in which the sec...