US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,822, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Kai-Qiang Wen (Hsinchu, Taiwan), Shih-Fen Huang (Jhubei, Taiwan), Shih-Chun Fu (Hsinchu, Taiwan), Chi-Yuan Shih (Hsinchu, Taiwan), Feng Yuan (Hsinchu, Taiwan), Wan-Lin Tsai (Hsinchu, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby...